Low temperature liquid phase epitaxy of silicon thin films was successfully carried out at a temperature of (400~500)℃,using Au/Bi alloy as a Si-saturated Sn solution was used to protect the substrate surface,preven...
Abstract: The Raman scattering spectra of n- type GaP(doped S) single crystal and red and green luminous materials grown on the n - type GaP (doped S) single crys-tal substrate by liquid - phase epitaxy are analyed. T...