云南高校图书馆联盟文献共享服务平台- MAGNETORESISTANCE

MAGNETORESISTANCE: 作品数：269被引量：126H指数：5; 导出分析报告; 相关领域：理学一般工业技术电气工程更多>>; 相关作者：高波张晓丽刘少鹏原晓波金光星更多>>; 相关机构：中国科学技术大学东北大学北京大学山东师范大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划安徽省自然科学基金天津市自然科学基金更多>>

Ferromagnetism in sp^(2) carbon: 《Nano Research》2023年第12期12883-12900,共18页Wenxiang Wang Julienne Impundu Jiyou Jin Zhisheng Peng Hui Liu Zheng Wei Yushi Xu Yu Wang Jiawang You Weimin Fan Yong Jun Li Lianfeng Sun; supported by Major Nanoprojects of Ministry of Science and Technology of China(No.2018YFA0208403);the National Natural Science Foundation of China(No.21973021);The GBA National Institute for Nanotechnology Innovation,Guangdong,China(No.2020B0101020003);Chinese Academy of Sciences Project for Young Scientists in Basic Research(No.YSBR-030);Strategic Priority Research Program of Chinese Academy of Sciences(Nos.XDB36000000 and NBSDC-DB-18).; The bulk,pristine sp^(2) carbons,such as graphite,carbon nanotubes,and graphene,are usually assumed to be typical diamagnetic materials.However,over the past two decades,there have been many reports about the ferromag...; 关键词：FERROMAGNETISM sp^(2)carbon anomalous Hall effect spin devices MAGNETORESISTANCE

Magnetoresistance anomaly in Fe_(5)GeTe_(2)homo-junctions induced by its intrinsic transition: 《Nano Research》2023年第7期10443-10450,共8页Ruijie Zhao Yanfei Wu Shaohua Yan Xinjie Liu He Huang Yang Gao Mengyuan Zhu Jianxin Shen Shipeng Shen Weifeng Xu Zeyu Zhang Liyuan Zhang Jingyan Zhang Xinqi Zheng Hechang Lei Ying Zhang Shouguo Wang; This work was financially supported by the National Key Research and Development Program of China(No.2022YFA1204004);the National Natural Science Foundation of China(Nos.52071026,52130103,51971026,and 52201288);the ISF-NSFC Joint Research Program(No.51961145305);the Beijing Natural Science Foundation Key Program(No.Z190007);the open research fund of Songshan Lake Materials Laboratory(No.2022SLABFN18);the Fundamental Research Funds for the Central Universities(No.06500140).; Two-dimensional van der Waals(2D vdW)magnets have attracted great attention recently and possess the unprecedented advantages of incorporating high-quality vdW heterostructures and homostructures into spintronic devic...; 关键词：Two-dimensional(2D)van der Waals magnets Fe_(5)GeTe_(2) homo-junction MAGNETORESISTANCE

Planar-symmetry-breaking induced antisymmetric magnetoresistance in van der Waals ferromagnet Fe_(3)GeTe_(2): 《Nano Research》2022年第3期2531-2536,共6页Ping Liu Caixing Liu Zhi Wang Meng Huang Guojing Hu Junxiang Xiang Chao Feng Chen Chen Zongwei Ma Xudong Cui Hualing Zeng Zhigao Sheng Yalin Lu Gen Yin Gong Chen Kai Liu Bin Xiang; the National Key Research and Development Program of China(No.2017YFA0402902);the National Natural Science Foundation of China(No.1210041089);National Synchrotron Radiation Laboratory(No.KY2060000177),NJUPT-SF(No.NY220163);the US NSF(No.DMR-2005108).; Recently discovered magnetic van der Waals(vdW)materials provide an ideal platform to explore low-dimensional magnetism and spin transport.Its vdW interaction nature opens up unprecedented opportunities to build verti...; 关键词：2D magnetism Fe_(3)GeTe_(2) planar structure engineering antisymmetric magnetoresistance

Electron scattering by Friedel oscillations in carbon nanotubes: 《Nano Research》2022年第2期889-897,共9页Takumi Inaba Takahiro Morimoto Satoshi Yamazaki Toshiya Okazaki; Multi-walled carbon nanotube networks were confirmed to exhibit a linear decrease in resistivity with increasing temperature from 100 to above 400 K.The linearity was explained using a defect scattering model that inv...; 关键词：carbon nanotube electron transport electron-electron interaction Friedel oscillations MAGNETORESISTANCE

Cornerstone of molecular spintronics: Strategies for reliable organic spin valves被引量：1: 《Nano Research》2021年第11期3653-3668,共16页Shuaishuai Ding Yuan Tian Wenping Hu; The authors acknowledge financial support from the National Key R&D Program of China (Nos. 2016YFB0401100 and 2017YFA0204503);the National Natural Science Foundation of China (Nos. 52003190, 51633006, 91833306, 21875158, 51703159, and 51733004).; Organic spin valve (OSV), one of the most promising and representative devices involving spin injection, transport and detection, has drawn tremendous attention owing to their ultra-long spin relaxation time in the fi...; 关键词：molecular spintronics organic spin valves MAGNETORESISTANCE device reliability fair performance evaluation

Gate-tunable linear magnetoresistance in molybdenum disulfide field-effect transistors with graphene insertion layer被引量：1: 《Nano Research》2021年第6期1814-1818,共5页Hao Huang Hongming Guan Meng Su Xiaoyue Zhang Yuan Liu Chuansheng Liu Zhihong Zhang Kaihui Liu Lei Liao Ning Tang; the National Key Research and Development Program of China(No.2018YFB0406603);the National Natural Science Foundation of China(Nos.61574006,61522401,61927806,61521004,11634002,and U1632156);the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB30000000).; Molybdenum disulfide (MoS2) holds great promise as atomically thin two-dimensional (2D) semiconductor for future electronics and opto-electronics. In this report, we study the magnetoresistance (MR) of MoS2 field-effe...; 关键词：molybdenum disulfide(MoS2) contact linear magnetoresistance graphene insertion layer mobility

Unveiling the role of Fe_(3)O_(4)in polymer spin valve near Verwey transition被引量：1: 《Nano Research》2021年第1期304-310,共7页Shuaishuai Ding Yuan Tian Xiang Liu Ye Zou Huanli Dong Wenbo Mi Wenping Hu; the National Key R&D Program(Nos.2016YFB0401100,2017YFA0204503);the National Natural Science Foundation of China(Nos.91833306,21875158,51633006,51703159,51733004).The authors acknowledge the Laboratory of Microfabrication,Institute of Physics,CAS,for their assistance in electrode fabrication。; The spinterface formed between ferromagnetic(FM)electrode and organic materials is vital for performance optimization in organic spin valve(OSV).Half-metallic Fe_(3)O_(4)with drastic change in structure,conductivity a...; 关键词：polymer spin valves Fe_(3)O_(4) Verwey transition MAGNETORESISTANCE

Linear magnetoresistance versus weak antilocalization effects in Bi2Te3被引量：1: 《Nano Research》2015年第9期2963-2969,共7页ZhenhuaWang Liang Yang Xiaotian Zhao Zhidong Zhang Xuan P. A. Gao; In chalcogenide topological insulator materials, two types of magnetoresistance （MR） effects are widely discussed： a sharp MR dip around zero magnetic field, associated with the weak antilocalization （WAL） effect...; 关键词：LINEAR magnetoresistanqweak antilocalization Bi2Te3 films topological insulators

Spin valve effect of NiFe/graphene/NiFe junctions被引量：2: 《Nano Research》2013年第5期373-379,380,共8页Muhammad Zahir Iqbal Muhammad Waqas Iqbal Jae Hong Lee Yong Seung Kim Seung-Hyun Chun Jonghwa Eom; When spins are injected through graphene layers from a transition metal ferromagnet, high spin polarization can be achieved. When detected by another ferromagnet, the spin-polarized current makes high- and low-resista...; 关键词：GRAPHENE spin valve magnetic junction MAGNETORESISTANCE SPINTRONICS

Magnetoresistance Oscillations of Ultrathin Pb Bridges被引量：1: 《Nano Research》2009年第9期671-677,共7页Jian Wang Xucun Ma Shuaihua Ji Yun Qi Yingshuang Fu Aizi Jin Li Lu Changzhi Gu X.C.Xie Mingliang Tian Jinfeng Jia Qikun Xue; by the National Science Foundation and the Ministry of Science and Technology of China and the Penn.State MRSEC under NSF grant DMR-0820404.; Pb nanobridges with a thickness of less than 10 nm and a width of several hundred nm have been fabricated from single-crystalline Pb fi lms using low-temperature molecular beam epitaxy and focus ion beam microfabricat...; 关键词：Pb nanobridge MAGNETORESISTANCE SUPERCONDUCTIVITY molecular beam epitaxy scanning tunneling microscope focus ion beam

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