supported by the National Natural Science Foundation of China(61322408,61221004,61334007,61274091,61106119 and 61106082);National Basic Research Program of China(2010CB934200 and 2011CBA00602);National High Technology Research and Development Program of China(2011AA010401 and 2011AA010402)
Resistive random access memory(RRAM) has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast op...