高阻GaN基MSM结构紫外探测器的光电流特性  

Properties of photocurrent in GaN-based MSM Ultraviolet Photodetectors

作　　者：苑进社[1] 陈光德[2] 谢伦军[2] 

机构地区：[1]西安理工大学应用物理系 [2]西安交通大学应用物理系

出　　处：《半导体光电》2003年第5期335-337,共3页Semiconductor Optoelectronics

摘　　要：　用非特意掺杂的高阻GaN薄膜研制了MSM结构紫外探测器。研究发现在5V偏压,365nm光激发条件下,光电流衰减出现振荡现象;响应时间为毫秒量级。未经退火处理,MSM结构的暗态伏安特性呈线性关系,器件的暗电阻出现低阻现象。Thet metalsemiconductormetal(MSM) ultraviolet photoconductive detectors have been fabricated using compound metals interdigital contacted with high resistant GaN film. It has been found that the photocurrent of the device exhibits vibrating property when it decays at 5V bias voltage and 365nm light excitation. The linear dark IV characteristic and lower dark resistance of the MSM structure without annealing treatment have been also observed.

关 键 词：GAN薄膜 MSM结构 光电流特性 

分 类 号：TN23[电子电信—物理电子学]