漂移区均匀掺杂SOILIGBT通态电阻模型  

Modeling on-state Resistance of SOI LIGBT with Uniform Doped Drift Region

作　　者：徐文杰[1] 孙玲玲[1] 张海鹏[1] 

机构地区：[1]杭州电子科技大学CAD研究所,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2007年第2期1-4,共4页Journal of Hangzhou Dianzi University：Natural Sciences

基　　金：国家自然科学基金资助项目(60036030);浙江省自然科学基金资助项目(y104599)

摘　　要：在研究影响绝缘层上硅横向绝缘栅双极晶体管通态电阻物理机制的基础上,将通态电阻分解为沟道电阻、漂移区电阻和缓冲层电阻。计算沟道电阻考虑了沟道两侧耗尽层扩展对沟道电阻的影响。计算漂移区电阻时,将漂移区按载流子的分布分为3个部分,然后分别进行求解。然后综合得到SOI LIGBT通态电阻的近似模型,并讨论了影响SOI LIGBT通态电阻特性的主要因素,最后根据讨论结果提出改善措施。Based on the mechanisms that on-state resistance of SOI LIGBT is affected,the on-state resistance is divided and modeled mainly into three parts: the channel resistance,drift region resistance and buffer region resistance.The impacts from expanding of depletion region on the channel resistance are considered in calculating the channel resistance.As for the drift region resistance,the drift region is divided into three parts according to the different distributions of carriers and derived respectively.Finally,according to the model obtained,the main factors influencing on the on-state resistance are discussed and its improving measures are put forward.

关 键 词：绝缘层上硅 横向绝缘栅双极晶体管 通态电阻 耗尽层 调制电阻 

分 类 号：TN432[电子电信—微电子学与固体电子学]