纳米硅对掺铒氧化硅电致发光的增强作用  

ENHANCING EFFECT OF NANOSCALE SiON ELECTROLUMINESCENCEFROM Er-DOPED Si OXIDE

作　　者：陈源[1] 冉广照[1] 戴 伦 袁放成[1] 秦国刚[1] 马振昌[2] 宗婉华[2] 吴正龙[3] 

机构地区：[1]北京大学物理系,北京100871 [2]河北半导体研究所砷化镓集成电路国家实验室,河北石家庄050051 [3]北京师范大学测试中心,北京100875

出　　处：《红外与毫米波学报》2002年第z1期69-75,共7页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金资助项目

摘　　要：用磁控溅射法在ｎ＋－Ｓｉ衬底上淀积掺铒的富硅氧化硅(ＳｉＯ２:Ｓｉ:Ｅｒ)薄膜,并制备了Ａｕ/ＳｉＯ２:Ｓｉ:Ｅｒ/ｎ＋－Ｓｉ发光二极管,观测到这种发光二极管的１．５４μｍ电致发光强度是在掺铒二氧化硅薄膜上以同样方法制备的Ａｕ/ＳｉＯ２:Ｅｒ/ｎ＋－Ｓｉ发光二极管的８倍．在ｎ＋－Ｓｉ衬底上淀积了纳米(ＳｉＯ２:Ｅｒ/Ｓｉ/ＳｉＯ２:Ｅｒ)三明治结构,其硅层厚度以０ ２ｎｍ为间隔从１．０ｎｍ变化到４．０ｎｍ．在室温下观察到了Ａｕ/纳米(ＳｉＯ２:Ｅｒ/Ｓｉ/ＳｉＯ２:Ｅｒ)/ｎ＋－Ｓｉ发光二极管的电致发光,其电致发光谱可分解成峰位和半高宽都固定的３个高斯峰,峰位分别为０．７５７ｅＶ(１．６４μｍ)、０．８０６ｅＶ(１．５４μｍ)和０．８６０ｅＶ(１．４４μｍ),半高宽分别为０．０５２、０．０４５和０．０５５ｅＶ,其中１．５４μｍ峰来源于Ｅｒ发光．当硅层厚度为１．６ｎｍ时,３个峰的强度都达到最大,分别是没有硅层的Ａｕ/ＳｉＯ２:Ｅｒ/ｎ＋－Ｓｉ发光二极管相应３个峰的２２、７．９和６．７倍．A SiO2 :Si: Er film was deposited on a n+ -Si substrate using the magnetron sputtering technique, and electroluminescence (EL) was observed from the Au/SiO2:Si:Er/n+-Si structure at room temperature under reverse bias, which was defined as that the n+ -Si substrate has a higher voltage than that of the Au electrode, larger than 4V. EL from the Au/SiO2 : Si: Er/n + -Si light emission diodes (LEDs) was studied systematically. The 1. 54-μm EL intensity ratio of an Au/ SiQ2: Si: Er/n + -Si LED with the SiO2: Si: Er film having an excess Si content of 20 % to that of an Au/SiO2: Er /n+ -Si LED with the SiO2 : Er film without any excess Si is as large as 8. Also a nanoscale (SiO2 : Er/Si/SiO2 : Er) sandwich structure was deposited, in which the silicon layer between the two SiO2:Er barriers was 1.0 - 4.0 nm thick with an interval of 0. 2 nm, on the n+ -Si substrate. EL from the Au/SiO2 : Er/Si/SiO2: Er/n + -Si structure was observed under reverse bias at room temperature. Each EL spectrum of the LEDs with Si layers having different thicknesses can be fitted by three Gaussian bands with fixed peak energies of 0.757 eV (1.64 μm), 0.806 eV (1. 54 μm) and 0.860 eV (1.44 μm), and fixed full widths at half maximum of 0.052, 0. 045 and 0. 055 eV, respectively. The 1. 54 μm peak was assigned to the Er3+ luminescence. Among the LEDs with Si layers of various thicknesses, the1.64, 1. 54 and 1.44 nm EL intensities of the Au/SiO2: Er/Si/SiO2: Er/n+ -Si LED with a 1.6 nm Si layer attain maxima which are 22, 7.9 and 6.7 times larger than those of the Au/SiO2 : Er/n+ -Si LED, respectively.

关 键 词：Er3+ 氧化硅 纳米硅 电致发光. 

分 类 号：TN[电子电信]