有机玻璃的反应离子深刻蚀  

Study on Deep Reactive Ion Etching of Commerical Polymethlmethacrylate Film

作　　者：张丛春[1] 杨春生[1] 丁桂甫[1] 毛海平[1] 倪智萍[1] 

机构地区：[1]上海交通大学微纳米科学技术研究院,上海200030

出　　处：《上海交通大学学报》2004年第z1期118-121,共4页Journal of Shanghai Jiaotong University

基　　金：国家自然科学基金资助项目(50075055)

摘　　要：以有机玻璃薄片为原料,进行反应离子深刻蚀,探讨了有机玻璃的刻蚀反应机理,着重研究了工作气压和功率密度对刻蚀速率、图形形貌的影响.结果表明,O2反应离子刻蚀有机玻璃是以化学刻蚀为主,同时离子碰撞作用也很重要.刻蚀速率开始随气压增大而加快,刻蚀速率主要受氧活性粒子浓度控制;气压超过一定值时,刻蚀速率反而减小,气压太高不利于各向异性刻蚀.刻蚀速率随功率增加而增大,适当增大功率有利于各向异性刻蚀.通过优化刻蚀工艺,可以获得侧壁较陡直光滑的有机玻璃微结构,扩展了加工微结构的方法.A reactive ion etching process of commercial PMMA was developed to fabricate microstructures. The polymer decomposition in plasma was described. Ion bombardment of the polymer surface is characterized as the energetically dominant activation mechanism. The effect of process parameters on the etching rate and profile was discussed. It is demonstrated that the etching rate initially increases with the increasing gas pressure but decreases after 6.65 Pa, too high pressure is deleterious to the anisotropy etching. The etching rate increases continually with the increased power density, but the power can not surpass (50 W) to prevent sample from distorting. The microstructures with deep and smooth sidewall can be achieved by an optimum etching process.

关 键 词：反应离子刻蚀 有机玻璃 微结构 微机电系统 

分 类 号：TN305.7[电子电信—物理电子学]