硅片清洗及最新发展  

Silicon Wafer Cleaning and New Development

作　　者：刘红艳[1] 万关良[1] 闫志瑞[1] 

机构地区：[1]北京有色金属研究总院有研半导体材料股份有限公司,北京100088

出　　处：《中国稀土学报》2003年第z1期144-149,共6页Journal of the Chinese Society of Rare Earths

摘　　要：对目前硅片湿式化学清洗方法中常用的化学清洗溶液的清洗机理、清洗特点、清洗局限以及清洗对硅片表面微观状态的影响进行了详细论述。介绍了兆声波、臭氧、电解离子水、只用HF清洗或简化常规工艺后最后用HF清洗等最新的硅片清洗技术,指出了硅片清洗工艺的发展趋势。The paper introduced the cleaning principle, cleaning characters, cleaning limitation and the effect to the surface micro-condition of some traditional cleaning solutions. It also introduced some new cleaning technologies such as megasonic, O_3, electrolytic ionized water and just only use HF or use HF in the last step to clean silicon wafer. At the same time, the paper pointed out the developing tendency of the silicon wafer cleaning process.

关 键 词：硅片 硅片清洗 硅片表面微观状态 

分 类 号：TN304[电子电信—物理电子学]