VLSI金属互连电迁移可靠性评估技术研究  

Investigation into Technologies for Reliability Assessment of Electromigration Failure of VLSI Interconnections

作　　者：薛丽君[1] 杜磊[1] 庄奕琪[1] 鲍立[1] 李伟华[1] 马中发[1] 

机构地区：[1]西安电子科技大学技术物理学院,陕西西安710071

出　　处：《微电子学》2002年第6期412-415,共4页Microelectronics

摘　　要：　在简要介绍电迁移失效机理的基础上,对各种电迁移可靠性实验评估方法的特点进行了分析对比,重点研究了VLSI金属互连电迁移可靠性的噪声评估技术。通过实验数据和结果的对比分析,证明噪声方法不仅可行,而且有着其他传统方法不可比拟的优越性,具有极好的应用前景。Physical mechanism of electromigration is introduced, and various techniques for assessment of electromigration reliability are analyzed and compared in the paper. The noise assessment technology for the electromigration reliability of metal interconnections in VLSI's is dealt with in particular, which is shown to have many startling advantages, compared to traditional techniques.

关 键 词：VLSI 金属互连 电迁移 可靠性评佶 噪声测试 

分 类 号：TN47[电子电信—微电子学与固体电子学] TN405.97