Al_xGa_(1-x)N/GaN异质结二维电子气磁输运性质研究(英文)  

Investigation of the Magnetotransport Propertiesof the Two dimentional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

作　　者：郑泽伟[1] 沈波[1] 刘杰[1] 周慧梅[1] 钱悦 张荣[1] 施毅[1] 郑有火斗 蒋春萍[2] 郭少令[2] 郑国珍[2] 褚君浩[2] Someya T Arakawa Y 

机构地区：[1]南京大学物理系,江苏南京210093 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [3]Research Center for Advanced Science and Technology and Institute of Industrial Science

出　　处：《发光学报》2001年第z1期67-70,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金资助项目 ( 6 980 6 0 0 6 ,6 9976 0 14和 6 99870 0 1) ;国家高技术研究和发展计划项目;日本科学促进协会前沿研究项目 (JSPS RFTF96P0 0 2 0 1)~~

摘　　要：在 1 5K低温和 0～ 9T的高磁场下研究了AlGaG/GaN异质结二维电子气的磁输运性质。实验结果在 4块样品中都观察到了Shubnikov daHass振荡的双周期行为。表明异质结的三角势阱中有两个子带被电子占据。通过电子子带占据时电子浓度分配的线形行为得到第二子带被占据的阈值浓度为 7 2× 1 0 12 cm-2 。通过对不同样品量子散射时间和输运迁移率的研究 ,说明在 1 5K下远程离化施主散射在量子散射时间中起主要作用。Tansport properties of the two dimentional electron gas (2DEG) in the triangula r quantum well in Al xGa 1-xN/GaN heterostructures have been strud ied by means of magnetotransport measurements at the temperature of 1 5K and the ma gnetic field up to 9T. Double periodicity of the Shubnikov de Hass oscillation h as been observed,indicating that the second subband in the triangular quantum we ll at the heterointerface has been occupied.We extrapolate that the second subba nd starts to be populated at the concentration of about 7 2×10 12cm -2 .In the study of the quantum scattering time,we conclude that the remote donor sattering is the dominant scattering mechanism contributing to the quantum scat tering time.

关 键 词：磁传输特性 二维电子气 AlxG1-xN/GaN 

分 类 号：TN312.8[电子电信—物理电子学]