基片位置对微波等离子体合成金刚石的影响  

CVD DIAMOND FILMS DEPOSITED BY MICROWAVE PLASMA:EFFECT OF THE SUBSTRATE POSITION

作　　者：满卫东[1] 孙蕾[1] 谢鹏[1] 汪建华[1] 

机构地区：[1]武汉工程大学等离子体化学与新材料省级重点实验室,湖北武汉430073

出　　处：《真空与低温》2008年第3期140-144,共5页Vacuum and Cryogenics

基　　金：湖北省教育厅创新团队项目(2004)资助。

摘　　要：用自制的微波功率为5kW的微波等离子体(MPCVD)装置、用H2/CH4/H2O作为反应气体在较高的沉积气压(12.0kPa)条件下,研究了基片放置在等离子体球边缘附近不同位置对CVD金刚石沉积和生长的影响。结果表明,CVD金刚石的形核和生长对环境的要求是不同的;在等离子体球边缘处不利于金刚石的形核,但有利于高质量金刚石的沉积。Diamond is deposited by a home-made 5 kW microwave plasma CVD rector with an input microwave power of 3.5 kW at a gas pressure of 12.0 kPa using H2/CH4/O2 gas mixtures. Effects of different deposition position were compared. Surface morphology as well as the quality of the deposition were examined. The results indicate that high quality diamond film can be obtained if the substrate was set at the edge of plasma ball.

关 键 词：化学气相沉积 金刚石 微波等离子体 生长 

分 类 号：O484.1[理学—固体物理]