垂直布里奇曼法生长铜单晶体的研究  

Study on Copper Single Crystal Grown by Vertical Bridgman Method

作　　者：王立苗[1] 赵北君[1] 朱世富[1] 唐世红[1] 何知宇[1] 肖怀安[1] 

机构地区：[1]四川大学材料科学系,成都610064

出　　处：《人工晶体学报》2009年第1期44-47,共4页Journal of Synthetic Crystals

摘　　要：Cu单晶在中子和X射线单色器及激光核聚变靶材等领域有重要应用前景。本文采用自制的硅钼棒单晶生长炉和特制的镀碳石英生长坩埚,采用垂直布里奇曼法在30℃/cm的温度梯度下,以10 mm/d的下降速度生长出较高质量的铜单晶体。生长的晶体经多次研磨抛光腐蚀处理后进行X射线衍射分析和金相分析,显示出(200)晶面尖锐的X射线衍射峰和规则的方形蚀坑,表明生长的晶体结构完整。The high-quality copper single crystals have been successfully grown by the vertical Bridgman method(VBM),using a self-made growth furnace which is heated with four molybdenum disilicide rods.The parameters for crystal growth are typically as follows: temperature gradient at the solid-liquid interface is about 30 ℃/cm,the descending speed of the crucible is about 10 mm/d.After being polished several times,the copper crystal was analyzed by the X-ray diffraction and metallographic phase.The results show that...

关 键 词：铜 单晶生长 垂直布里奇曼法 蚀坑观察 

分 类 号：O782[理学—晶体学]