基片温度对电子束蒸发的ZnS薄膜性能的影响  

Influence of substrate temperature on properties of ZnS films prepared by electron-beam evaporation

作　　者：黄红梁[1] 程树英[1] 黄碧华[1] 

机构地区：[1]福州大学物理与信息工程学院,福建福州350108

出　　处：《光电子．激光》2009年第3期355-358,共4页Journal of Optoelectronics·Laser

基　　金：教育部留学回国人员科研启动基金资助项目(LXKQ0801);福建省科技厅重点资助项目(2008I0019);福建省教育厅资助项目(JB08012)

摘　　要：采用电子束蒸发在不同基片温度下沉积ZnS薄膜,研究了基片温度对薄膜性能的影响。结果表明:不同基片温度下沉积的ZnS薄膜均呈多晶状态,为体心立方(闪锌矿)结构的β-ZnS,并具有明显的(111)面择优取向,导电类型为n型。随着成膜时基片温度的提高,薄膜结晶度越来越好,透过率增大,载流子浓度增大,而电阻率减小。ZnS thin films were deposited on glass substrates by electron-beam evaporation technique at different substrate temperatures.The effects of substrate temperature on properties of films were investigated.The results show that the ZnS films are of n-type conduction,they are polycrystalline ZnS thin films with sphalerite structure,and the crystallites in the films are exclusively oriented along the(111)direction.With the increasing of the substrate temperature,the crystallinity of ZnS films becomes better,and ...

关 键 词：ZNS薄膜 性能 电子束蒸发 基片温度 

分 类 号：O484.41[理学—固体物理]