GaAs衬底上InP的直接外延生长及性能表征  

Preparation and Measurements of InP/GaAs(100) Heteroepitaxy

作　　者：熊德平[1] 周守利[2] 

机构地区：[1]广东工业大学物理与光电工程学院,广州510006 [2]浙江工业大学信息工程学院,杭州310014

出　　处：《光电子技术》2009年第2期122-124,共3页Optoelectronic Technology

摘　　要：用低压金属有机物气相外延(LP-MOCVD)技术,采用低温缓冲层生长法,在GaAs(100)衬底上直接生长了高质量的InP外延层。1.2μm InP(004)面X射线衍射(XRD)ω-2θ和ω扫描半高全宽(FWHM)分别为373 arcsec和455 arcsec,在外延层中插入10周期Ga0.1In0.9P/InP应变超晶格后,其半高全宽分别下降为338 arcsec和391 arcsec。透射电子显微镜(TEM)测试显示,应变超晶格有效地抑制了失配位错穿进外延层,表明晶体质量得到了较大提高。InP/GaAs(100) heteroepitaxies are prepared by optimizing the low-temperature buffer layers.The quality of InP epilayers can be dramatically improved by inserting a 10-period Ga0.1In0.9P/InP strained layer superlattice(SLS) in them,for 1.2 μm epilayers,the full width at half maximum(FWHM) values of X-ray diffraction(XRD) InP(004) ω-2θ and ω scans are 338 arcsec and 391 arcsec,respectively;transmission electron microscopy(TEM) indicates that the SLS effectively reduce the density of threading dislocation in epilayers.

关 键 词：异质外延 低温缓冲层 应变超晶格 金属有机物气相外延 

分 类 号：TN304.054[电子电信—物理电子学]