氨化Si基Ga_2O_3/Ta薄膜制备GaN纳米线  

Synthesis of GaN Nanowires Prepared by Ammoniating Ga_2O_3/Ta Films on Si Substrate

作　　者：李红[1] 薛成山[1] 庄惠照[1] 张晓凯[1] 陈金华[1] 杨兆柱[1] 秦丽霞[1] 

机构地区：[1]山东师范大学物理与电子科学学院半导体研究所,济南250014

出　　处：《微细加工技术》2007年第5期31-33,51,共4页Microfabrication Technology

基　　金：国家重大自然科学基金资助项目(9020102590301002)

摘　　要：利用磁控溅射技术在Si衬底上制备Ga2O3/Ta薄膜,然后在900℃、氨气中退火合成了大量的一维单晶氮化镓纳米线。用X射线衍射、扫描电子显微镜、傅里叶红外吸收光谱、透射电子显微镜、选区电子衍射和光致发光谱对制备的氮化镓进行了表征。结果表明,制备的GaN纳米线是六方纤锌矿结构,其直径大约为50 nm,最大长度可达8μm左右。室温下光致发光谱的测试发现了364 nm处有较强紫外发光峰。One dimensional single crystalline GaN nanowires were successfully prepared from Ga2O3/Ta films deposited on Si substrates by magnetron sputtering when the Ga2O3/Ta films were annealed in ammonia environment at 900 ℃.The GaN nanowires were characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM),Fourier transform infrared spectra(FTIR),transmission electron microscopy(TEM),selected-area electron diffraction(SAED) and photoluminescence(PL).The results show that the nanowires are hexagonal wurtzite structure,their diameters are about 50 nm and the longest one can be up to about 8 μm,and the PL spectrum at room temperature exhibits a strong UV light emission at 364 nm.

关 键 词：氮化镓 磁控溅射 纳米线 

分 类 号：TN304[电子电信—物理电子学]