场发射硅锥阵列的干法制备与研究  

Fabrication of Silicon Tip Array in Field Emission Pressure Sensor by Reactive Ion Etching

作　　者：王芸[1] 徐东[1] 吴茂松[2] 王莉[2] 钱开友[1] 叶枝灿[1] 蔡炳初[1] 

机构地区：[1]上海交通大学微纳米科学技术研究院薄膜与微细技术教育部重点实验室微米/纳米加工技术国家级重点实验室,上海200030 [2]Honey well公司上海传感器实验室,上海200030

出　　处：《微细加工技术》2006年第1期56-60,共5页Microfabrication Technology

摘　　要：阐述了用于场发射压力传感器发射阴极的硅锥阵列的干法制备工艺,用反应离子刻蚀(RIE)的方法在76 mm(3 in.)的低阻硅片上制备出52个均匀分布的10×12的硅锥阵列,得到了曲率半径为25 nm^35 nm且具有良好一致性的尖锥。当阵列的场发射起始电压为1.4 V/μm,场强为9.2 V/μm时,单个硅锥的发射电流达到8.3 nA,并且性能较为稳定。The fabrication process of silicon tip array for field emission pressure sensor is presented. Fifty two 10 × 12 Si tip arrays on a 3 inches wafer are fabricated by RIE. Under a certain recipe, the tips with 25 nm to 35 nm radius of curvature have perfect profile, and the arrays have good uniformity all over the wafer. The influence of the SP6/O2 proportion on the tip's profile is discussed, as well as the resource of the 'RIE grass'. The threshold voltage of the array is 1.4 V/μm, and the emitting current of a single tip is 8.3 nA at 9.2 V/μm. It is obvious that the arrays have very good performance.

关 键 词：硅锥 干法刻蚀 RIE 场发射 

分 类 号：TN304[电子电信—物理电子学]