1.55μm光发射OEIC技术研究  

Investigation on 1.55 μm Light Transmitter OEIC

作　　者：李献杰[1] 曾庆明[1] 徐晓春[1] 刘伟吉[1] 敖金平[1] 王全树[1] 杨树人[2] 赵方海[2] 柯锡明[3] 王志功[3] 刘式墉[2] 梁春广[1] 

机构地区：[1]河北半导体研究所专用集成电路国家重点实验室,河北石家庄050051 [2]吉林大学电子工程系 [3]东南大学射频与光电集成电路研究所,江苏南京210096

出　　处：《半导体光电》2002年第1期23-25,共3页Semiconductor Optoelectronics

基　　金：8 6 3国家高科技资助项目 (86 3- 30 7- 15 - 3- 0 4 )

摘　　要：采用一种新的基于InP材料在 [0 11]晶向化学腐蚀形成的平滑剖面的互连工艺和两次曝光光刻技术 ,设计并制作了带有 1.5 5 μm多量子阱激光器和InP/InGaAs异质结双极晶体管驱动电路的光发射单片光电集成电路。在 1.5Gbit/s 2 2 3- 1伪随机码调制下器件有张开的眼图 ,光输出功率为 2dBm ,芯片功耗约 12 0mW。A monolithicaly integrated light transimitter OEIC was designed and fabricated using a double exposure process and a novel interconnecting process based on smooth profile of InP formed by wet etching. The OEIC consists of a 1 55 μm wavelength multi quantum well laser diode and a driver circuit with heterojunction bipolar transistors (HBTs). An open eye diagram under 1.5 Gb/s bit rate 2 23 -1 nonreturn to zero (NRZ) pseudorandom code is demonstrated. The output optical power and power dissipation of the transmitter are 2 dBm and 120 mW, respectively.

关 键 词：光发射 光电集成电路 INP 

分 类 号：TN256[电子电信—物理电子学] TN929.11