单片集成长波长光接收机  

Long Wavelength Monolithic Integrated Photoreceiver

作　　者：敖金平[1] 刘伟吉[1] 李献杰[1] 曾庆明[1] 赵永林[1] 乔树允[1] 徐晓春[1] 王全树[1] 

机构地区：[1]河北半导体研究所,河北石家庄050051

出　　处：《半导体光电》2002年第1期26-28,共3页Semiconductor Optoelectronics

基　　金：国家 8 6 3高科技资助项目 (86 3- 30 7- 15 - 3- 0 4 )

摘　　要：介绍了利用InGaAs长波长金属 半导体 金属 (MSM )光探测器与InAlAs/InGaAs高电子迁移率晶体管 (HEMT)集成来实现长波长单片集成光接收机的材料和电路设计、关键工艺途径等 ,解决了工艺兼容性问题 ,实现了 2 .The circuit design and fabricating process of long wavelength monolithically integrated photoreceiver using metal semiconductor metal(MSM) InGaAs photodetector and InAlAs/InGaAs high electronic mobility transistor(HEMT) are presented. The compatibility of the process is discussed. As a result, a prototype of long wavelength monolithically integrated photoreceiver is demonstrated under a transmitting rate of 2.5 Gb/s.

关 键 词：OEIC 单片集成 光接收机 

分 类 号：TN256[电子电信—物理电子学] TN929.11