两步生长和直接生长GaAs/Si单晶薄膜的比较  

Comparison of Two-step Growth and Direct Growth for GaAs on Si

作　　者：刘翔[1] 吴长树[1] 张鹏翔[1] 角忠华[1] 赵德锐[1] 陈庭金[2] 廖仕坤[3] 杨家明[4] 

机构地区：[1]昆明理工大学,云南昆明650051 [2]云南师范大学,云南昆明650092 [3]昆明物理研究所,云南昆明650093 [4]昆明冶金研究院,云南昆明650051

出　　处：《半导体光电》2002年第2期128-131,共4页Semiconductor Optoelectronics

基　　金：云南省自然科学基金资助项目 (99E0 0 0 9Q)

摘　　要：报道了采用热壁外延 (HWE)技术 ,在 (10 0 ) ,(111)和 (2 11)三种典型Si表面通过两步生长和直接生长法制备GaAs单晶薄膜 ,经过拉曼光谱、霍尔测试和荧光光谱分析比较 ,得出结论 :(1)相同取向Si衬底 ,两步生长法制备的GaAs薄膜结晶质量比直接生长法制备的GaAs薄膜的要好 ;(2 )采用HWE技术在Si上异质外延GaAs薄膜 ,其表面缓冲层的生长是降低位错、提高外延质量的基础 ;(3)不同取向Si衬底对GaAs外延层结晶质量有影响 ,(2 11)面外延的GaAs薄膜质量最好 ,(10 0 )面次之 ,(111)Monocrystalline GaAs layer grown on (100),(111) and (211) Si substrate by hot wall epitaxy two-step growth and direct growth is reported.Having compared two-step growth with direct growth, some conclusion can be drawn from the measurement of Raman,Hall and photoluminescence.First,the quality of GaAs layer fabricated by two-step growth is better than that fabricated by direct growth on the same Si substrate.And second,buffer layer (BL) is the base of lower dislocation and higher crystal quality.Lastly,different Si substrates will affect the quality of GaAs layer,i.e.,the quality of GaAs layer on (111) Si substrate is the worst,while the quality of GaAs layer on (211) Si substrate is the best.

关 键 词：两步生长 直接生长 GAAS/SI 

分 类 号：TN304.054[电子电信—物理电子学]