溅射功率及压强对磁控溅射Mo薄膜电学性能和表面形貌的影响  

Effects of Ar Pressure and Sputtering Power on the Electrical and Surface Morphology of Mo Films Prepared by Magnetron Sputtering

作　　者：王天兴[1,2] 夏存军[1,2] 李超[1,2] 李苗苗[1,2] 杨海刚[1,2] 宋桂林[1,2] 常方高[1,2] 

机构地区：[1]河南师范大学物理与信息工程学院,河南新乡453007 [2]河南省光伏材料重点实验室,河南新乡453007

出　　处：《河南师范大学学报（自然科学版）》2011年第3期36-39,共4页Journal of Henan Normal University(Natural Science Edition)

基　　金：河南省重大科技攻关项目(092102210018);河南省教育厅自然科学研究计划项目(2010B140008;2011A140016);河南师范大学青年科学基金(01026400017)

摘　　要：采用直流磁控溅射的方法在普通玻璃衬底上沉积Mo薄膜,研究了工作压强、溅射功率对Mo薄膜的电学性能、表面形貌的影响.实验表明,在我们所使用的压强范围内(0.2~2.0 Pa),溅射压强低时,沉积速率较快,制备出的薄膜导电性能亦较好;0.4 Pa时达到最佳值,电阻率为1.22×10-4Ω.cm,且扫描电镜(SEM)图显示薄膜具有致密、平整的表面形貌;在压强固定时(0.2 Pa),沉积速率随溅射功率(50~150 W)基本呈线性增加,且随溅射功率的增加,制备的Mo薄膜更加致密,显示出连续降低的电阻率;148 W时,电阻率为7.6×10-5Ω.cm.The morphology and conductivity of Mo films are prepared under different working pressure(0.2-2.0 Pa) and power(50-150 W)on the ordinary glass substrates by direct current magnetron sputtering.The experimental result shows that the surface morphology becomes coarse with increaded Ar pressure when power is fixed at 108W.And the conductivity becomes worse correspondingly.The highest resistivity,1.22×10-4 Ω·cm,is reached at a Ar pressure of 0.4 Pa.When working pressure is fixed at 0.2 Pa,the deposition rate of Mo films increases almost linearly with power.And the surface morphology of Mo film becomes smoother with power increasing.In addition,the resistivity becomes lower with increased power and the lowest resistivity of Mo film is obtained as 7.6x10-5 Ω·cm at 148 W.

关 键 词：直流磁控溅射 溅射Ar气压强 溅射功率 表面形貌 导电性 

分 类 号：N55[自然科学总论] G658.3[文化科学—教育学]