绝缘层上硅膜-红外区熔再结晶过程中熔区的检测  

Detection of Molten Zone During SOI-ZMR Process

作　　者：张鹏飞[1] 田果成[2] 蔡林[2] 钱佩信[1] 

机构地区：[1]清华大学微电子所 [2]北方交通大学光波技术研究所

出　　处：《传感器技术》1993年第6期1-4,共4页Journal of Transducer Technology

摘　　要：硅片上熔区温度的检测,是实现SOI(Silicon-on-Insulator)材料结构的区熔再结晶(ZMR)工艺的技术关键,也是技术难点之一.提供了一种适用于特定实验环境(高频、高压、高温)的具有特殊功能(高分辨率、易于瞄准)的光纤测温计,对于提高ZMR工艺的稳定性,可控性和良好的重复性具有重要意义.The key problem in development of ZMR (Zone-Melting-Recrystallization) SOI (Silicon-on-Insulator) technology is detecting of the temperature of the molten zone on silicon wafer. A novel fibre pyrometer with advanced functions (high space resolution and easy aiming) has been proposed to suit the special experimental environment (high frequency, high voltage and high temperatureX which proves to be effective in enhancement of stability, controlling and reproducibility of ZMR technology.

关 键 词：再结晶 半导体薄膜 温度 测量 

分 类 号：TN304.055[电子电信—物理电子学]