GaN基LED中Ag/ITO复合膜的光电性能研究  

Analysis of Optical and Electrical Properties of Ag/ITO Composite Membrane for GaN-based LED

作　　者：喻斌[1] 王玉霞[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130022

出　　处：《长春大学学报》2013年第2期180-184,共5页Journal of Changchun University

摘　　要：制备含有不同厚度Ag(0.5、2、4nm)的Ag/ITO多层膜沉积在以蓝宝石为衬底的外延片上并与P-GaN相接触,经过一定的退火处理。研究了Ag厚度、退火温度、退火时间对Ag/ITO多层膜的透过率、方块电阻和接触电阻率的影响。得出这种光电性能优良的Ag/ITO膜作为P型透明电极应用于大功率LED有广阔的前景。The samples of Ag/ITO multilayer films sedimentary with different Ag layer thickness of 0.5nm,2nm and 4nm are prepared,which is on the epitaxial wafer of sapphire substrate and contacts with p-GaN,and an annealing treatment on the samples is made.The effects of Ag thickness,annealing temperature and annealing time on the transmittance of Ag/ITO multilayer films,sheet resistance and specific contact resistance are investigated.The results show that,as a P-type transparent electrode,Ag/ITO multilayer films with good photoelectric properties applied in high power LED will have broad prospects.

关 键 词：Ag/ITO P-GAN 透过率 方块电阻 接触电阻 

分 类 号：N[自然科学总论]