半导体器件总剂量辐射效应的热力学影响  

Thermodynamic Impact on Total Dose Effect for Semiconductor Components

作　　者：丛忠超[1,2,3] 余学峰[1,2] 崔江维[1,2] 郑齐文[1,2,3] 郭旗[1,2] 孙静[1,2] 周航[1,2,3] 

机构地区：[1]中国科学院特殊环境功能材料与器件重点实验室新疆理化技术研究所,新疆乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,新疆乌鲁木齐830011 [3]中国科学院大学,北京100049

出　　处：《发光学报》2014年第4期465-469,共5页Chinese Journal of Luminescence

基　　金：西部博士资助项目(XBBS201219)资助

摘　　要：对商用三极管和MOS场效应晶体管进行了不同环境温度下的总剂量辐照实验,对比了不同辐照温度对这两种器件辐射效应特性的影响。实验结果表明,对于同一辐照总剂量,三极管的基极电流、电流增益和MOS场效应晶体管的阈值电压漂移值都随着辐照温度的不同而存在较大的差异。总剂量为100 krad,辐照温度分别为25,70,100℃时,NPN三极管的电流增益倍数分别衰减了71,89和113,而NMOS晶体管的阈值电压VT分别减少了3.53,2.8,2.82 V。The total dose irradiation experiments were conducted on commercial triodes and MOS transistors. The impacts of different radiation temperature on the radiation effect were compared when the other conditions were identical. For the same total dose, the base current and current gain of the triode, and the threshold voltage of the MOS transistor exist a big discrepancy according to the different radiation temperature. When the total dose is 100 krad(Si) and the radiation temperature is 25, 70, 100°C, the current gain reduction of the NPN triode is 71, 89, 113, and the threshold voltage degradation of the NMOS transistor is 3.53, 2.8, 2.82 V, respectively.

关 键 词：总剂量辐射效应 MOS晶体管 三极管 不同温度辐照 

分 类 号：TN386.1[电子电信—物理电子学]