Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction  

作　　者：XIE ZiLi 1,2,3, ZHOU YuanJun 1 , SONG LiHong 1,2 , LIU Bin 1 , HUA XueMei 1,2 , Xiu XiangQian 1 , ZHANG Rong 1,2,3 & ZHENG YouDou 1,2,3 1 JiangSu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University, Nanjing 210093, China 2 Nanjing National Laboratory of Microstructures, Nanjing 210093, China 3 NJU-Yangzhou Institute of Opto-electronics, Yangzhou, 225001, China 

出　　处：《Science China(Physics,Mechanics & Astronomy)》2010年第1期68-71,共4页中国科学：物理学、力学、天文学（英文版）

基　　金：Supported by the Special Funds for Major State Basic Research Project(Grant No. 2006CB6049);the Hi-tech Research Project (Grant Nos.2006AA03A118 and 2006AA03A142);the National Natural Science Foundation of China (Grant Nos. 60721063, 60676057, 60731160628, 60710085,60820106003, and 60990311);the Natural Science Foundation of Jiangsu province (Grant No. BK2008019);the Research Funds from the NJU-Yangzhou Institute of Opto-electronics

摘　　要：High-resolution X-ray diffraction has been used to analyze GaN(0001) epitaxial layers on sapphire substrates. Several structural properties of GaN, including the lattice constants, strains, and dislocation densities are revealed by the technique of X-ray dffraction (XRD). Lattice constants calculated from the omega/2theta scan are c=0.5185 nm and a=0.3157 nm. Also, the in-plane strain is -1.003%, while out of the plane, the epitaxial film is almost relaxed. Several methods are used to deduce the mosaicity and dislocation density of GaN, showing that the edge type dislocations are the overwhelming majority.High-resolution X-ray diffraction has been used to analyze GaN(0001) epitaxial layers on sapphire substrates. Several structural properties of GaN, including the lattice constants, strains, and dislocation densities are revealed by the technique of X-ray dffraction (XRD). Lattice constants calculated from the omega/2theta scan are c=0.5185 nm and a=0.3157 nm. Also, the in-plane strain is -1.003%, while out of the plane, the epitaxial film is almost relaxed. Several methods are used to deduce the mosaicity and dislocation density of GaN, showing that the edge type dislocations are the overwhelming majority.

关 键 词：GAN XRD DISLOCATION EPITAXIAL 

分 类 号：O471.5[理学—半导体物理]