柔性基底AZO薄膜制备及其红外发射率身性能研究  

Preparation and Infrared Emission Properties of AZO Film on Soft Substrate

作　　者：李静[1] 王智勇[1] 何山[1] 望咏林[1] 武建华[1] 陈洁[1] 温培刚[1] 

机构地区：[1]北京航空材料研究院,北京100095

出　　处：《材料工程》2009年第S1期293-297,共5页Journal of Materials Engineering

基　　金：武器装备预研基金资助项目(9140A10020406HK51)

摘　　要：利用反应磁控溅射,用不同掺杂比的锌铝合金靶材,在PI有机柔性基底表面制备了附着力良好、电阻率低的透明AZO薄膜,利用AFM,XRD、分光光度计、四电子探针等分析测试技术对AZO薄膜的形貌、结构、光电性能等进行了表征。并对性能良好的AZO薄膜在(3~5μm)和(8~14μm)两个大气窗口的红外发射率身性能进行了研究。With ZnAl metallic alloy target,transparent conducting AZO films were deposited on the PI organic substrate at lower temperature by reactive magnetron sputtering.In this work,the morphology,structure,optical properties and electrical properties of the films were investigated by the atomic force microscopy,X-ray diffraction,spectrophotometry and four-point probe technique.The infrared emissivity for the optimal films are studied in the spectral range of 3-5μm and 8-14μm.

关 键 词：AZO薄膜 反应磁控溅射 红外发射率 

分 类 号：TB383.2[一般工业技术—材料科学与工程]