(311)A GaAs衬底掺Si GaAs/AlGaAs p沟HFET结构材料特性  

Characterization of GaAs/AlGaAs p-Channel HFET Structure Materials on(311)A GaAs Substrates Using Si Doping

作　　者：孙娟[1] 谢自力[2] 邱凯[3] 尹志军[3] 

机构地区：[1]南京电子器件研究所,南京210016 [2]南京大学物理系,南京210093 [3]中国科学院固体物理研究所,合肥230031

出　　处：《半导体技术》2008年第S1期49-51,共3页Semiconductor Technology

摘　　要：利用MBE技术在(311)A GaAs衬底上生长了Si掺杂GaAs/Al GaAs p沟道HFET结构材料。通过控制V/Ⅲ束流和其他生长参数,优化了材料的生长条件。通过Si掺杂获得p型GaAs和Al GaAs材料,研制生长了微波毫米波器件应用的HFET器件结构材料。Hall测试表明该结构材料具有很好的特性。The GaAs/AlGaAs p channel HFET structure materials were grown on(311)A GaAs substrate by molecular beam epitaxy.The growth conditions were optimized by controlling the V/Ⅲ flux ratio and other growth conditions.The p type GaAs and AlGaAs materials using only silicon doping were grown in microwave and millimeter wave device.The Hall measurements indicate that this p channel HFET material has excellent performance.

关 键 词：分子束外延 硅掺杂 P沟道 异质结构效应晶体管 

分 类 号：TN386[电子电信—物理电子学]