异变生长GaAs基长波长InAs垂直耦合量子点  

GaAs Based Long-Wavelength Metamorphic InAs Quantum Dots Grown by Molecular Beam Epitaxy

作　　者：王鹏飞[1] 熊永华[1] 吴兵朋[1] 倪海桥[1] 黄社松[1] 牛智川[1] 

机构地区：[1]中国科学院半导体研究所超晶格国家重点实验室,北京100083

出　　处：《半导体技术》2008年第S1期55-58,共4页Semiconductor Technology

摘　　要：GaAs基InAs自组织量子点在通信集成光电子以及新兴单光子器件中有着广泛应用,利用分子束外延生长方法获得长波长的InAs/GaAs量子点结构。提出了在GaAs基In0.05Ga0.95As异变过渡层上生长InAs/GaAs/InAs双层耦合量子点结构,同时利用InGaAs盖层中引入Sb辅助生长的方法,通过改变生长温度、淀积量以及In组分等生长参数,最终得到了室温光致发光波长为1533nm的InAs量子点结构,谱线半高宽为28.6meV,经原子力显微镜测试表明,其密度为(4~8)×109cm-2。预计进一步提高量子点密度后,此技术可应用于长波长量子点激光器材料的分子束外延生长。GaAs based InAs self-assembled quantum dots(QDs)including intergraded optoelectronic devices have got in optical communication and quantum functional devices such as single photon emission.A new structure of bilayer stacked QDs grown on In0.05Ga0.95As metamorphic buffer was proposed.By optimizing the growth parameters of InAs QDs introducing Sb for the growth of InGaAs cover layers for the upper InAs QDs,the emission wavelength of InAs QDs are extended to 1 533 nm at room temperature with strong PL intensity and FWHM of 28.6 meV.The density of the QDs is in the range of(4-8)×109 cm-2.

关 键 词：分子束外延 INAS量子点 异变过渡层 光致发光谱 

分 类 号：TN304.054[电子电信—物理电子学]