非极性a面p型GaN∶Mn薄膜的结构、形貌和铁磁性质  

Structure,Morphology and Ferromagnetism Properties of Nonpolar a-Plane p-Type GaN∶Mn Films

作　　者：孙莉莉[1] 闫发旺[1] 张会肖[1] 王军喜[1] 曾一平[1] 王国宏[1] 李晋闽[1] 

机构地区：[1]中科院半导体研究所半导体照明研发中心,北京100083

出　　处：《半导体技术》2008年第S1期127-128,139,共3页Semiconductor Technology

基　　金：国家自然科学基金(60876068);留学回国人员科研启动基金(08y1010000)

摘　　要：采用离子注入和快速退火技术制备了稀磁非极性a面p型GaN∶Mn薄膜。通过高分辨X射线衍射、原子力显微镜和超导量子干涉仪等测试手段,对样品的结构、形貌和磁性质进行了分析。测试分析结果表明,在退火过程中生成了对样品的铁磁性质起重要贡献的Mn3Ga相,快速退火过程可以有效恢复离子注入过程对样品的损伤,所得非极性GaN∶Mn退火样品具有室温铁磁特性。Diluted magnetic nonpolar a-plane p-GaN∶Mn films were fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane GaN films with a subsequent rapid thermal annealing(RTA)process.The structure,morphology and magnetic characteristics of the samples were investigated by means of high-resolution X-ray diffraction(HRXRD),atomic force microscopy(AFM),and a superconducting quantum interference device(SQUID),respectively.The results show that the existence of the Mn3Ga phase,which may play an important role in the room temperature ferromagnetic properties of the as-annealed sample,the RTA process can effectively recover the crystal deterioration caused by the implantation process,and that the as-annealed sample shows obvious ferromagnetic properties at the room temperature.

关 键 词：稀磁半导体 非极性a面p-GaN 离子注入 室温铁磁性 

分 类 号：TN304[电子电信—物理电子学]