ICP刻蚀对p-GaN表面改性及接触的影响  

Effects of ICP Etching on the Surface Properties of p-GaN and Contact Formations

作　　者：邓俊静[1] 齐胜利[1] 陈志忠[1] 田朋飞[1] 郝茂盛 张国义[1] 

机构地区：[1]北京大学人工微结构和介观物理国家重点实验室,北京100871 [2]上海蓝光科技有限公司,上海518033

出　　处：《半导体技术》2008年第S1期143-146,共4页Semiconductor Technology

摘　　要：采用不同条件的等离子体(O2、Cl2)对p-GaN样品进行刻蚀,通过扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、阴极荧光谱(CL)、光致发光光谱(PL)、电流-电压(I-V)等方法详细研究了等离子体刻蚀对p-GaN表面改性及接触的影响。研究发现,经O2等离子体刻蚀后,样品的Ga/N降低,PL谱的蓝带发生蓝移,说明刻蚀减小了p-GaN中与Mg相关的自补偿作用,使得更多的Mg原子起到受主作用。另外,样品经O2等离子体处理后在表面形成了一层严重影响接触欧姆特性的氧化层,但此氧化层可经Cl2等离子体刻蚀后得到有效的去除。p-GaN samples were etched using O2 or Cl2 plasma under different conditions.A series of measurements were performed including scanning electron microscope(SEM),X-ray photoelectron spectroscopy(XPS),cathodoluminescence spectra(CL),photoluminescence spectra(PL)and current-voltage(I-V),to investigate the effects of plasma etching on the surface properties and the contact of p-GaN.It indicates that the Ga/N ratio decreased and the blue band of PL show a blue shift after O2 plasma etching.It reveals that the etching reduces the Mg related self-compensation so that more Mg atoms become the acceptors.In addition,it forms an oxide film on the surface of samples after O2 etching.The oxide film,which make the ohmic contact beha-vior worse,can be removed efficiently by using Cl2 plasma.

关 键 词：感应耦合等离子体 氮空位 蓝带 

分 类 号：TN305.7[电子电信—物理电子学]