S波段SiC MESFET微波功率MMIC  

S-Band SiC MESFET Power MMICs

作　　者：柏松[1] 陈刚[1] 冯忠[1] 钱峰[1] 陈征[1] 吴鹏[1] 任春江[1] 李哲洋[1] 郑惟彬[1] 蒋幼泉[1] 陈辰[1] 

机构地区：[1]南京电子器件研究所单片集成电路与模块国家级重点实验室,南京210016

出　　处：《半导体技术》2008年第S1期244-246,共3页Semiconductor Technology

摘　　要：利用本实验室生长的半绝缘衬底上的4H-SiC外延材料开展了SiC MESFET和MMIC的工艺技术研究。在实现SiC衬底减薄和通孔技术的基础上,采用微带技术以及全套的无源器件,设计并研制了国内第一片SiC微波功率MMIC。研制的SiC MMIC工作频段为S波段,在1.8~3.4GHz的频带内小信号增益大于12dB,漏电压为32V时带内脉冲输出功率超过5W。SiCMMIC小信号特性达到了设计预期,但输出功率低于设计值。这是由于受到MI M电容耐压能力的限制,SiC MMIC的工作电压比较低。Based on domastic SiC epitaxy and SiC MESFET technology,a monolithic microwave integrated circuit(MMIC)process was developed including MIM capacitors,spiral inductors,thin-film resistors and via-holes.A two-stage SiC power MMIC was designed and fabricated for S-band operation.At frequency of 1.8 to 3.4 GHz,the MMIC delivers a linear gain larger than 12 dB,and a pulse power is over 5 W under a drain voltage of 32 V.The applied drain voltage is limited by the voltage handling capability of the metal-insulator-metal(MIM)capacitor,which result in a low power output for the fabricated SiC MMIC.

关 键 词：碳化硅 金属半导体场效应晶体管 微波功率 单片微波集成电路 

分 类 号：TN386.3[电子电信—物理电子学]