离子注入工艺在4H-SiC器件中的应用  

Application of Ion Implant in 4H-SiC Process

作　　者：李春[1] 陈刚[2] 

机构地区：[1]南京电子器件研究所五中心 [2]南京电子器件研究所单片集成电路与模块国家级重点实验室,南京210016

出　　处：《半导体技术》2008年第S1期252-255,共4页Semiconductor Technology

摘　　要：介绍了离子注入工艺可在SiC器件中形成欧姆接触,其电阻值经退火后可达到10-6Ω.cm2;同时也可利用离子注入在平面工艺中形成良好的电学隔离,避免工艺复杂化,提高了成品率。最后通过B+注入形成边缘终端制作4H-SiC肖特基势垒二极管的例子说明了离子注入在SiC器件制造过程中所起的重要作用。High ohmic contact was achieved by ion implantation in SiC device,the resistance approximately equals 10-6Ω·cm2 after annealing.Also ion implantation can form electricity isolation and improve production rate.By using B+ implantion,an amorphous layer as the edge termination was formed for 4H-SiC Schottky barrier diodes.It explains that the ion implantation acts an important role in SiC device.

关 键 词：离子注入 4H碳化硅 欧姆接触 肖特基势垒二极管 隔离技术 

分 类 号：TN303[电子电信—物理电子学]