4H-Si_(1-y)C_y合金的生长及特性  

Analysis of the Growth and Properties of 4H-Si_(1-y)C_y Alloy

作　　者：俞斐[1] 吴军[1] 韩平[1] 王荣华[1] 葛瑞萍[1] 赵红[1] 俞慧强[1] 谢自力[1] 徐现刚[2] 陈秀芳[2] 张荣[1] 郑有炓[1] 

机构地区：[1]南京大学物理学系江苏省光电信息功能材料重点实验室,南京210093 [2]山东大学晶体材料研究所晶体材料国家重点实验室,济南250100

出　　处：《半导体技术》2008年第S1期290-293,共4页Semiconductor Technology

摘　　要：用化学气相淀积(CVD)法,在6H-SiC衬底上同质外延生长SiC层,继而外延生长了Si1-yCy合金薄膜,用XRD、扫描电子显微镜、电化学腐蚀测电容-电压(ECV)方法,以及俄歇电子能谱(AES)等方法对所得的样品进行了表征测量。XRD衍射谱表明合金薄膜晶体取向单一;SEM结果显示Si1-yCy合金薄膜表面平整,晶粒大小均匀。利用ECV方法得到样品中的载流子浓度分布,由衬底至表面呈n型导电。外延层中(表面除外)的载流子浓度分布是与C的深度分布相关的,表面部分的载流子浓度分布则与背景非故意掺杂相关。Si1-yCy alloy are deposited on SiC homoepitaxial layer acquired by chemical vapor deposition method on 6H-SiC substrates.X-ray diffraction,scanning electron microscopy,ECV-profile method,Auger electron spectroscopy and other methods were used to characterize the Si1-yCy alloy samples.The Si1-yCy alloy has good surface morphology and the XRD spectrum shows only a single character diffraction peak.Carrier concentration distribution is acquired by ECV-profile method,from the substrate to the surface,the electric type of the sample shows n type throughout the film.The distribution of carriers in the whole deposited film(except the surface part)is related to the C distribution,while the distribution of carriers in the surface part is related to the unintentionally doping by background impurities.

关 键 词：化学气相淀积 4H-Si1-yCy合金 电化学腐蚀电容电压 载流子浓度分布 

分 类 号：TN304.055[电子电信—物理电子学]