生长温度对Si_(1-x)Ge_x∶C薄膜特性的影响  

Effects of Growth Temperature on Properties of Si_(1-x)Ge_x∶C Alloy Films

作　　者：葛瑞萍[1] 韩平[1] 吴军[1] 俞斐[1] 赵红[1] 谢自力[1] 张荣[1] 郑有炓[1] 

机构地区：[1]南京大学物理系江苏省光电信息功能材料重点实验室,南京210093

出　　处：《半导体技术》2008年第S1期294-297,共4页Semiconductor Technology

摘　　要：用化学气相淀积方法,在Si(100)衬底上生长Ge组分渐变的Si1-xGex∶C合金薄膜。用X射线衍射(XRD)、喇曼散射光谱(Raman)、能量色散谱(EDS)等对所得到的样品进行了表征测量,着重研究了Si1-xGex∶C合金层生长温度对样品结构特征的影响。结果表明,Si1-xGex∶C合金层中的Ge原子浓度沿表面至衬底方向逐渐降低,其平均组分随着生长温度的升高而降低,这与较高生长温度(760～820℃)所导致的原子扩散效应相关;Si1-xGex∶C合金薄膜具有单一的晶体取向,薄膜的晶体质量随着温度的升高而降低。Si1-xGex∶C/Si样品载流子浓度沿衬底至表面方向逐渐上升且Si1-xGex∶C合金层总体呈p型导电,对其导电分布特性进行了分析研究。Si1-xGex∶C alloy films with graded Ge content were deposited on Si(100)substrates by chemical vapor deposition method.X-ray diffraction、energy disperse spectroscopy and Raman scattering spectra were applied to characterize the Si1-xGex∶C/Si samples.The results show that the concentration of Ge atoms in Si1-xGex∶C alloy films declines gradually from the surface to the substrate and the average Ge content in the Si1-xGex∶C alloy films decreases while the growth temperature of the buffer increasing,this is related to the diffusing of Ge atoms due to the higher growth temperature(760 to 820 ℃).Si1-xGex∶C alloy films have only one crystal orientation and the crystal quality of Si1-xGex∶C/Si samples decreases while the growth tempe-rature increasing.The layer is p-type and the concentration of carriers in Si1-xGex∶C/Si sample,grown at 760 ℃,increases from the substrate to the surface.The conductive distribution of carriers was discussed.

关 键 词：Si1-xGex∶C合金薄膜 化学气相淀积 生长温度 载流子 

分 类 号：TN304.054[电子电信—物理电子学]