O_2流量对ZnO薄膜生长及性质的影响  

Effect of O_2 Flow Rate on the Properties and Growth of ZnO Thin Films

作　　者：周茂峰[1] 顾书林[1] 朱顺明[1] 

机构地区：[1]南京大学物理系南京微结构国家重点实验室,南京210093

出　　处：《半导体技术》2008年第S1期349-352,共4页Semiconductor Technology

基　　金：国家自然科学基金(60776013;60576017;50532100);国家"973"重点基础研究项目2006CB921803);国家"863"高技术研究发展计划(2007AA03Z404)

摘　　要：讨论了MOCVD生长ZnO薄膜各种性质随氧流量的变化规律。固定锌源(DEZn)流量改变氧源(O2)流量,采用低压MOCVD在石英衬底上生长一组ZnO薄膜样品。由厚度测量、Raman散射、XRD表征表明,随O2流量增加,ZnO薄膜生长速率先提高后降低,碳杂质有所减少,晶体质量先提高后降低。PL显示,随O2流量增大带内深能级发光带强度逐步增强,带边发光峰强度也有较大变化,薄膜光学质量先提高后退化。霍尔测量表明,随氧流量增大,薄膜电阻率逐渐增加。实验表明不同氧流量对MOCVD生长的ZnO薄膜多种性质都有规律性影响。The various properties of ZnO films prepared by MOCVD show notable regular change with the different flow rates of O2.When fixed the flow rate of zinc precursor and increases the flow rate of O2,a series of ZnO films grown by LP-MOCVD is obtaines.Thickness measurement,Raman spectra and XRD indicates that the growth rate of ZnO films increases at first and then decreases.The content of unintended doped carbon decreases,and the structural properties of ZnO films improved and then degrades with increasing the flow rate of O2.The deep level emissions in PL spectra are enhanced gradually with the increase of O2 flow rate,but the near-band-edge emission show different changes,indicating the optical properties of ZnO films improved and then degraded with O2 flow rate.Hall measurement indicates that the specific resistence of ZnO films increases gradually with the increasing of O2 flow rate.This study indicates the flow rate of O2 should be properly controlled to optimize the growth and properties of ZnO thin films prepared by MOCVD.

关 键 词：氧化锌薄膜 金属有机物化学气相淀积 氧气流量 锌源 

分 类 号：TN304.055[电子电信—物理电子学]