纳米碳化硅抛光液的制备及其对蓝宝石晶片抛光性能的研究  

Preparation of nano-SiC slurry and its polishing properties on sapphire substrate CMP

作　　者：熊伟[1] 储向峰[1] 董永平[1] 张王兵[1] 叶明富[1] 孙文起[1] 

机构地区：[1]安徽工业大学化学化工学院,安徽马鞍山243002

出　　处：《金刚石与磨料磨具工程》2013年第5期17-21,共5页Diamond & Abrasives Engineering

基　　金：国家自然科学基金项目(50975002);安徽工业大学创新团队项目(TD201204);教育部高校留学回国人员科研项目

摘　　要：制备了一种纳米SiC抛光液,用透射电镜观察其粒子形貌,通过纳米粒度仪研究了分散剂种类对悬浮液中SiC的粒径分布和Zeta电位的影响,并用制备的抛光液对蓝宝石晶片进行化学机械抛光。使用原子力显微镜观察蓝宝石晶片抛光后的表面形貌。结果表明:SiC磨料在以十六烷基三甲基溴化铵(CTAB)作为分散剂的悬浮液中分散效果最好;在相同试验条件下,采用质量分数1%的SiC抛光材料的去除速率最大,为24.0 nm/min,获得蓝宝石晶片表面质量较好,表面粗糙度R a为2.2 nm。A chemical mechanical polishing( CMP) slurry containing SiC nanoparticles was prepared. The particle morphology was observed by transmission electron microscopy( TEM). The effects of the dispersant species on the average particle size and the Zeta potential of SiC suspensions were investigated by Mastersizer. The SiC abrasive slurry was used for chemical mechanical polishing( CMP) sapphire substrate. The surface roughness of sapphire substrate polished by SiC slurry was measured by AFM. The results indicated that the dispersibility of SiC was best in the slurry containing hexadecyl trimethyl ammonium bromide( CTAB). Under the same conditions,the fastest material removal rate of sapphire substrate polished with slurry containing 1%( mass fraction) SiC was 24. 0 nm/min,and the best surface roughness of the sapphire substrate was 2. 2 nm.

关 键 词：SIC 蓝宝石晶片 化学机械抛光 分散剂 

分 类 号：TQ164[化学工程—高温制品工业]