基于严格电磁场模型的光学光刻仿真(英文)  

Rigorous electromagnetic field model for optical lithography simulation

作　　者：王飞[1] 周再发[1] 李伟华[1] 黄庆安[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《强激光与粒子束》2015年第2期36-39,共4页High Power Laser and Particle Beams

基　　金：supported by Natural Science Foundation in Jiangsu Province(BK2012324)

摘　　要：光学光刻技术已广泛应用于微电子机械系统(MEMS)以及集成电路(IC)领域。由于光刻工艺设备的价格十分昂贵,因此利用光刻仿真这一技术来预期工艺结果并优化工艺中存在的问题就显得很有必要。研究了一种基于严格电磁场模型的求解方法——波导方法,并将此方法拓展应用于模拟MEMS领域中的厚胶曝光场景。通过这一模型,可以模拟光刻胶内部的光强分布,并进一步预测出显影后的光刻胶形貌。最后,针对某些特定掩模版结构,给出它们的仿真结果并验证其正确性。Optical lithography is widely used in the micro-electro-mechanical system(MEMS)and integrated circuit.As the lithographic process equipment is very expensive,it is critical to utilize optical lithography simulation to predict the useful results and optimize process problems.In this paper,the waveguide(WG)method based on rigorous electromagnetic field model is presented.It is firstly extended to simulate the thick photoresist exposure in MEMS field.By applying this model,the light intensity distribution in the photoresist can be simulated.Thus,the morphology of photoresist after development can be predicted.Some examples demonstrate the validity of this model.

关 键 词：光刻 微电子机械系统 波导 光强分布 光刻胶 

分 类 号：TN305.7[电子电信—物理电子学]