热处理对ZnO/Au薄膜结构和压电特性的影响(英文)  

Effect of post-annealing on the structure and piezoelectric properties of ZnO/Au films

作　　者：杨杰[1] 陈光焱[1] 王旭光[1] 沈朝阳[1] 姚明秋[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621999

出　　处：《强激光与粒子束》2015年第2期176-180,共5页High Power Laser and Particle Beams

基　　金：supported by National Natural Science Foundation of China(61101038)

摘　　要：通过射频磁控溅射在氧化硅片表面沉积ZnO/Au薄膜,并通过不同的热处理方式对薄膜进行退火。为了研究退火对ZnO/Au薄膜结构和压电特性的影响,采用X射线衍射分析(XRD)、光学显微镜、场发射扫面电镜(FESEM)和压电力分析仪对薄膜退火前后的材料特性进行了分析。研究发现,热处理能够改善ZnO/Au薄膜的结晶质量。特别是在氮气保护氛围下慢速退火后,薄膜结晶质量有明显改善。但是,热处理导致了薄膜的压电系数d33和d31降低。分析认为,热处理过程中Au原子在ZnO中的易迁移特性破坏了ZnO/Au薄膜的压电性能。ZnO/Au films were deposited on oxidized silicon substrate by RF reactive sputtering technique and treated under various post-annealing atmospheres.X-ray diffraction(XRD),optical microscopy,field emission scanning electron microscope(FESEM)and piezometer were employed to analyze the effect of post-annealing on the structure and piezoelectric properties of ZnO/Au thin films.Crystalline qualities of ZnO/Au films were improved by post-annealing especially after careful annealing in nitrogen atmosphere.But piezoelectric parameters d33 and d15decreased after having annealed.The Au atomic migration under high annealing temperature was considered as the reason that exacerbated the piezoelectric properties of ZnO/Au films.

关 键 词：ZnO/Au 薄膜 压电特性 结构特性 退火 

分 类 号：TN304[电子电信—物理电子学]