湿法腐蚀制备GaN LED蓝宝石图形衬底的工艺方法研究  

Research on a Patterned Sapphire Substrate for GaN-Based LED and the Fabrication by Wet Etching

作　　者：徐文俊[1] 李海鸥[1] 李琦[1] 翟江辉[1] 何志毅[1] 李思敏[1] 

机构地区：[1]桂林电子科技大学广西信息科学实验中心,广西桂林541004

出　　处：《微电子学与计算机》2015年第4期102-106,共5页Microelectronics & Computer

基　　金：国家自然科学基金项目(61274077);广西自然科学基金项目(2013GXNSFGA019003);桂林电子科技大学研究生教育创新计划项目(GDYCSZ201449)

摘　　要：近几年来,蓝宝石图形衬底(PSS)制备工艺技术已成为国内外研究GaN基发光二极管(LED)的热点问题.该技术不仅能够降低GaN外延缺陷和位错密度,还能够有效提高LED的光提取效率.为了获得均匀性好的PSS及操作简便、成本较低的制备方法,采用湿法腐蚀方式研制C面蓝宝石图形衬底;利用自主设计的高温腐蚀系统,在硫酸和磷酸配比为3:1,加热280℃的条件下,腐蚀40分钟得到深度大于2μm的规整图形结构,具有极高的图形占空比;分析了时间、温度、腐蚀深度等因素与腐蚀速率的关系,对PSS结构设计和实现具有参考意义.In recent years,Patterned Sapphire Substrate(PSS)has become a research hotspot of GaN-based Light Emitting Diode(LED),for the two significant advantages this technology has embraced:it can not only reduce the defects and dislocation density of GaN epitaxial film,but also significantly improve the Light Extraction Efficiency(LEE)of LED.In this paper,a type of PSS and the corresponding manufacturing method are introduced,the cost could stay low with the wet etching,and good uniformity could also be achieved;by using our independent-designed etching system and the sulfuric acid-orthophosphoric acid mixture,apatterned structure with high duty ratio is obtained under the temperature of 280℃after the etching duration of 40 minutes,and the etching depth is more than2μm;The main factors effecting on the etching rate such as duration,temperature and etching depth are also analyzed in this paper.

关 键 词：蓝宝石图形衬底 湿法腐蚀 腐蚀速率 GAN LED 

分 类 号：TN312.8[电子电信—物理电子学]