磁性半导体Gd_xSi_(1-x)的XPS研究  

X-ray Photoelectron Spectroscopy Study of Magnetic Semiconductor Gd_x Si_(1-x)

作　　者：刘志凯[1] 周剑平[1] 柴春林[1] 杨少延[1] 宋书林[1] 李艳丽[1] 陈诺夫[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《真空科学与技术学报》2004年第2期154-156,共3页Chinese Journal of Vacuum Science and Technology

基　　金：国家 973资助项目 (批准号 :G2 0 0 0 0 3 65 ;G2 0 0 2CB3 190 5 );国家自然科学基金委员会资助项目 (批准号 :60 1760 0 1;60 2 0 60 0 7;60 3 90 0 72 )

摘　　要：采用离子束技术 ,在n型硅基片上注入稀土元素钆 ,制备了磁性 /非磁性p n结。本文中使用的XPS对制备的样品进行测试 ,利用Origin 7 0提供的PFM工具进行研究 ,O1s束缚能介于金属氧化物和SiO2 中O1s的束缚能之间 ,Si2p的XPS谱分裂为两个峰 ,其中一个是单质Si的 ,另一个介于单质Si和硅化物之间 ,Gd4d的束缚能介于金属钆和氧化钆中的Gd4d之间 。Magnetic/non magnetic p n junctions were fabricated by implanting gadolinium into n type silicon substrate with low energy dual ion beam epitaxy.The junctions were studied with X ray photoelectron spectroscopy(XPS).The spectra were then fitted with the peak fitting module(PFM)tool,provided by the software package,Origin 7 0.The results show that the binding energy of O 1 s is higher than that of the metal oxide but lower than that of the silicon oxides.The binding energy of Si 2 p splits into two distinctive peaks;one originates from silicon and the other may result from silicide or silica.The binding energy of Gd 4 d is somewhere between those of Gd metal and Gd oxides,indicating the formation of amorphous Gd silicide.

关 键 词：磁性半导体 GdxSi1-x XPS 离子束技术 非磁性p-n结 束缚能 无定形结构 x射线 光电子频谱 离子注入 硅化钆 

分 类 号：TN304.7[电子电信—物理电子学] O766.3[理学—晶体学]