电弧离子镀薄膜中的颗粒尺寸及其影响的扫描电镜观察  

SEM analysis of particles and its effects in arc ion plating

作　　者：李成明[1] 孙晓军[2] 张勇[3] 李桂英[3] 曹尔妍[3] 唐伟忠[1] 吕反修[1] 

机构地区：[1]北京科技大学材料学院,北京100083 [2]中国科学院兰州化学物理研究所,甘肃兰州730000 [3]中国科学院力学研究所,北京100080

出　　处：《电子显微学报》2004年第3期252-256,共5页Journal of Chinese Electron Microscopy Society

基　　金：中国科学院兰州化学物理研究所固体润滑国家重点实验室资助项目(No 01 03).

摘　　要：用扫描电镜对比分析了电弧离子镀增加直线磁场过滤对沉积TiN和TiAlN薄膜中颗粒的密度和尺寸的影响。结果表明,TiN薄膜中颗粒的最大直径,从14μm减小到3μm,颗粒密度从109 cm2降低到105 cm2。TiAlN薄膜由于靶材中含有低熔点金属Al,因而发射出更大的颗粒,有的颗粒集团达到20μm,磁场过滤后颗粒尺寸减小,颗粒密度降低到106 cm2。分析了脉冲叠加直流偏压对TiCrZrN复合薄膜相组成的影响。颗粒可使电弧离子镀TiN CrN多层膜的结合力降低,并使针孔产生遗传。使用直线型磁场过滤及脉冲叠加直流偏压不仅使颗粒密度和尺寸显著降低和减小,而且多层化对小颗粒产生了包覆作用。The effects of line magnetic filtering on the particles density and size in TiN and TiAlN films deposited by using arc ion plating have been examined by SEM. It showed that the maximum diameter and density of particles in TiN film were decreased from 14μm to 3μm and from 10~9/cm^2 to 10~5/cm^2, respectively. The size of maximum particle of TiAlN film in arc ion plating was to up 20μm because metal Al with low melting point was vaporized from TiAl targets. Using line magnetic filtering and with direct adding pulse bias, the size of particles in TiAlN film was decreased remarkably. The particles density of TiAlN film were decreased to 10~6/cm^2. The particles of TiN/CrN multilayer films in arc ion plating reduced the adhesion between film and substrate, and performed the transmissibility of pinholes. The density and maximum size of particles in the films were decreased observably when line magnetic filtering and with pulse and DC bias were applied at same time. Small particles were embedded in multilayer TiN/CrN films.

关 键 词：电弧离子镀薄膜 扫描电镜 磁场过滤 颗粒密度 氮化钛薄膜 

分 类 号：TG174[金属学及工艺—金属表面处理]