氧退火对Ba_(1-x)Sr_xTiO_3薄膜电荷存储特性的影响  

Influence of Oxygen Annealing on the Charge Storage Character of Ba_(1-x) Sr_xTiO_3 Thin Film

作　　者：陈平[1] 黄美浅[1] 李斌[1] 李观启[1] 

机构地区：[1]华南理工大学应用物理系,广东广州510640

出　　处：《华南理工大学学报（自然科学版）》2004年第8期13-17,共5页Journal of South China University of Technology(Natural Science Edition)

基　　金：教育部留学回国人员科研启动基金资助项目 ;华南理工大学自然科学基金资助项目

摘　　要：采用氩离子束镀膜技术和硅平面工艺 ,在经过干氧氧化的硅衬底上制备一层钛酸锶钡 (Ba1-xSrxTiO3)薄膜 ,再在氧气氛中进行不同条件的退火处理 ,然后蒸铝并利用光刻技术制作铝电极 ,从而形成金属 -绝缘体 -氧化物 -半导体 (MIOS)双介质电容器结构 .通过该薄膜电容器的充放电实验 ,研究薄膜的电荷存储特性 .结果表明 ,该薄膜在不超过 80 0 ℃下退火 ,其电荷存储能力主要与氧组分有关 ;氧空位越多 ,电荷存储能力越强 .Ba 1-xSr xTiO 3(BST) thin films wer e firstly deposited on dry-oxidized silicon substrate by using the argon-ion beam sputtering technique and the silicon planner process. Next, an annealing was carried out in oxygen atmosphere under different conditions. By means of the aluminum etching technique and the photoetching technique, an aluminum electrode was then made, thus constructing the double dielectric capacitor structure of metal-insulation-oxide-silicon (MIOS). The charge storage character of the thin-film capacitor was finally investigated by the charge and discharge experiment. The results show that, with the annealing temperature of no more than 800℃, the charge storage ability of the thin film depends mainly on the oxygen ingredient. The more oxygen vacancies are, the greater the charge storage ability is.

关 键 词：Ba1-xSrxTiO3薄膜 电荷存储特性 MIOS结构 退火 氧空位 陷阱 

分 类 号：TN432[电子电信—微电子学与固体电子学]