倒装芯片互连凸点电迁移的研究进展  

The progress of electromigration in bump interconnect

作　　者：吴丰顺[1] 张金松[1] 吴懿平[1] 王磊[1] 

机构地区：[1]华中科技大学塑性成形模拟及模具技术国家实验室

出　　处：《半导体技术》2004年第6期10-15,共6页Semiconductor Technology

基　　金：国家重点计划863项目(2002AA404110)

摘　　要：电子产品向便携化、小型化、高性能方向发展,促使集成电路的集成度不断提高,体积不断缩小,采用倒装芯片互连的凸点直径和间距进一步减小和凸点中电流密度的进一步提高,由此出现电迁移失效引起的可靠性问题。本文回顾了倒装芯片互连凸点电迁移失效的研究进展,论述了电流聚集和焊料合金成分对凸点电迁移失效的影响,指出了倒装芯片互连凸点电迁移研究亟待解决的问题。With the advance of electronic-products to portability, minimization and highperformance, the integrated density of chip is raising continually and the volume of chip is loweringcontinually. The interconnect reliability caused by electromigration in chip is becoming a key issue.In this paper, the study of electromigration on Sn/Pb alloy and Pb-free alloy solder bumps werereviewed. The effects of current crowding and alloy composition on electromigration were discussed,and then, the imminent challenges on electromigration were pointed out.

关 键 词：倒装芯片 互连 凸点 电迁移 电流聚集 

分 类 号：TN305.94[电子电信—物理电子学]