离子注入制备掺Er富硅氧化硅材料光致发光  

Photoluminescence of Er-doped silicon-rich SiO_2 prepared by ion implantation

作　　者：张昌盛[1] 肖海波[1] 王永进[1] 陈志君[1] 程新利[1] 张峰[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所离子束重点实验室,上海200050

出　　处：《功能材料与器件学报》2004年第2期151-154,共4页Journal of Functional Materials and Devices

基　　金：国家863计划(No.2001AA312070)

摘　　要：利用离子注入方法制备了掺Er富硅氧化硅材料,用XRD,TEM方法研究材料微观结构,并测量了样品的光致发光(PL),研究了发光强度随测量温度的变化。试验表明:在1173K以上退火,注入硅集聚,形成φ(2-4)nm的纳米晶硅(nc-Si),纳米晶硅外面包裹非晶硅(a-Si),注入的Er离子分布在非晶硅中。通过非晶硅与硅纳米晶相耦合,非晶硅吸收部分硅纳米晶对Er的激发能量,降低了Er的激发效率;在T>150K时,激发态Er与非晶硅间的能量背迁移降低了Er的发光效率。Er-doped silicon - rich SiO_2 were prepared by ion implantation. Its microstructure was investigated by using Transmition Electron Microscope (TEM) and X -ray Diffraction (XRD) Meter. Photoluminescence and its relation with the measured temperatures were also investigated. It is shown that silicon nanocrystals, which enwrapped by amorphous Si, are observed when the implanted films are annealed above 1173K. Er ions lie in amorphous Si and couple with nc-Si through a- Si. The excitation energy from nc-Si to Er is shared by a-Si. At T > 150K, energy back transfer between excited Er and a- Si decreases the PL efficiency.

关 键 词：ER 富硅氧化硅 光致发光 温度淬灭 

分 类 号：TN305.3[电子电信—物理电子学]