O_2气流量对MOCVD法生长ZnO薄膜性质的影响  

Effect of oxygen flow rate on the properties of ZnO thin films prepared by MOCVD

作　　者：马艳[1] 杜国同[1] 杨树人[1] 李正庭[1] 李万成[1] 杨天鹏[1] 张源涛[1] 赵佰军[1] 杨小天[1] 刘大力[1] 

机构地区：[1]吉林大学电子科学与工程学院集成光电子国家重点实验室,吉林长春130023

出　　处：《功能材料与器件学报》2004年第2期160-164,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(No.60177007;60176026);863计划资助项目(No.2001AA311130)

摘　　要：采用低压MOCVD方法,在(0001)Al_2O_3衬底上沉积了ZnO薄膜。研究了Ⅵ族源O_2气流量的变化对薄膜结构、表面形貌及光致发光特性的影响。增加O_2气流量,ZnO薄膜结晶质量有所降低,半高宽从0.20°展宽至0.30°,由单一c轴取向变成无取向薄膜。同时,生成的柱状晶粒平均尺寸减少,晶粒更加均匀,均方根粗糙度减小。PL谱分析表明:随O_2气流量加大,带边峰明显增强,深能级峰明显减弱,ZnO薄膜光学质量提高。这些事实说明:在本实验条件下,采用低压MOCVD方法生长的ZnO薄膜在光致发光特性主要依赖于Zn、O组份配比,而不是薄膜的微观结构质量。ZnO thin films were grown on (0001) substrate by LP- MOCVD. It is found that the flow rate of O_2 influences the crystalline quality, surface morphology and PL spectrum of the as -grown ZnO thin films remarkably. With increasing the flow rate of O_2, the single -orientated ZnO thin films are degraded to polycrystalline films with the FWHM of (0002) peak broadening from 0.20℃ to 0.30℃. At the same time, the averaged grain size becomes smaller and more homogeneous, and the surface of the films is smoother. The near-band - edge emissions in PL spectrum are greatly enhanced and the deep level emissions are weakened with the increase of O_2 flow rate due to the reduction of oxygen vacancies, which suggest that the optical quality of the ZnO thin films is improved. It indicates that under our testing condition, the photoluminescenceof ZnO films is more dependent on the stoichiometry than the microstructural quality.

关 键 词：ZNO薄膜 MOCVD PL谱 

分 类 号：TN304.055[电子电信—物理电子学] TN342.1