沉积温度对a-C:F薄膜结构与热稳定性的影响  

Influence of deposition temperature on the structure and thermal stability of a-C: F films

作　　者：陈玲玲[1] 程珊华[1] 宁兆元[1] 辛煜[1] 

机构地区：[1]苏州大学物理系,苏州215006

出　　处：《功能材料与器件学报》2004年第2期171-176,共6页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(No.10175048)

摘　　要：在不同的沉积温度下,利用CHF_3和C_2H_2为气体源,在微波电子回旋共振等离子体化学气相沉积(ECR-CVD)系统中制备了氟化非晶碳(a-C:F)薄膜,为了研究其热稳定性,薄膜在500℃的真空中作了退火处理。测量了退火前后其电学、光学性质的变化,使用FTIR、Raman、XPS方法考察了其结构随沉积温度的变化,分析了性质同结构之间的关联。结果表明,在高的沉积温度下制备的薄膜中的F/C比较低,CF_2和CF_3键成分较少而以CF键成分为主,其交联程度高,因而具有较好的热稳定性。Fluorinated amorphous carbon films (a-C: F) were prepared at different temperatures by using a microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CHF_3 and C_2H_2 as source gases. Films were annealed at 500℃ in vacuum ambience in order to investigate their thermal stability. The changes of structural, optical and electrical properties with deposition temperature were investigated. Results indicate that films deposited at high temperature have less CF_x bonding and more cross-linking structures, thus they have a better thermal stability. The loss of fluorine may result in the increasing of dielectric constant.

关 键 词：A-C:F 沉积温度 红外吸收谱 热稳定性 

分 类 号：O484.1[理学—固体物理]