新型功率器件MCT的研究  

Research of A New MCT Power Device

作　　者：唐国洪[1] 陈德英[1] 周健 

机构地区：[1]东南大学 [2]721厂

出　　处：《电子器件》1993年第2期87-93,共7页Chinese Journal of Electron Devices

摘　　要：本文探讨了新型功率器件MCT(MOS控制晶闸管)的结构设计、工艺设计及实施方法。通过计算机工艺模拟,采用SDB(硅片直接键合)、硅栅自对准工艺和多层介质隔离等技术,在实验室制成了MCT样品.测试结果表明.在-12伏的栅偏压下能在5μs内关断42A/cm^2的阳极电流.This paper deuls with a new MCT (MOS controlled thyristor) power device including the parameter and process design and the fabrication process. Based on the computer process simulation, the MCT samples were fabricated by using SDB (silicon dircct bonding), polysilicon gate sclfaliignment process and multi-lager diclcetrics insulation. Measurement resuits show that the anode cument of 42A/ cm2 can be cutoff in 5μs at the gate bias of-12V.

关 键 词：晶闸管 功率器件 硅片直接键合 MOS控制 晶闸管 

分 类 号：TN303[电子电信—物理电子学]