X射线光刻对准边缘增强技术及性能研究  

Study of Edge-enhanced Technique and Performance for Aligning of X-ray Lithography

作　　者：王德强[1] 谢常青[1] 叶甜春[1] 刘业异[2] 胡松[2] 

机构地区：[1]中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京100029 [2]中国科学院光电技术研究所,成都610209

出　　处：《微细加工技术》2004年第2期17-22,共6页Microfabrication Technology

摘　　要：针对三种不同的图像边缘增强方法进行了掩模和硅片识别精度以及对准精度的实验验证。采用一种新的测试方法,即先通过软件得到大量的数据,然后再进行数据分析,得出LAPLAC算子在识别精度和对准精度两个方面比较好,而改进后的SOBELII算子的对准时间最短,对准精度也很高。Three different methods of edge-enhanced image are proposed to measure mask and wafer placement and alignment accuracies.A novel measuring method is adopted: getting lots of data through the programmed software firstly,then analyzing the obtained data.The analyzing results show that LAPLAC operator is better than the others according to placement and alignment accuracies,but the revised SOBEL II operator is the best method of the alignment accuracy,and it has the shortest aligning time and the highest alignment accuracy.

关 键 词：X射线光刻 对准系统 拉普拉斯算子 识别精度 对准精度 

分 类 号：TN305.7[电子电信—物理电子学]