AlGaN/GaN异质结极化行为与二维电子气  

The polarization and 2DEG in AlGaN/GaN heterostructures

作　　者：薛丽君[1] 刘明[1] 王燕[2] 夏洋[1] 陈宝钦[1] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]清华大学微电子研究所,北京100084

出　　处：《半导体技术》2004年第7期63-65,56,共4页Semiconductor Technology

摘　　要：AlGaN/GaN异质结及其相关器件因其优越的电学特性成为近几年的研究热点。2DEG作为其特征与材料本身的极化现象关系密切。本文主要从晶体微观结构角度介绍AlGaN/GaN异质结极化现象的产生、机理和方向性,着重讨论极化对异质结界面处诱生的二维电子气的影响。极化不仅可提高2DEG的浓度,而且还能使其迁移率得到提高。AlGaN/GaN heterostructure has many characteristics which make it potential forelectronic devices that can be operated under conditions of high voltage, high frequency and hightemperature. 2DEG and polarization phenomena are the most important features of these devices.Based on the crystal structure, the mechanism and direction of polarization is presented. In addition,the characteristics of the 2DEG induced by polarization are reviewed. It is also pointed out thatpolarization can not only increase the concentration of 2DEG, but also improve the electron mobility.

关 键 词：AIGAN/GAN 异质结 极化 二维电子气 2DEG 

分 类 号：TN304.26[电子电信—物理电子学]