微电子生产工艺可靠性评价与控制  

Microelectronics Manufacture Process Reliability Evaluation and Control

作　　者：孔学东[1] 恩云飞[1] 章晓文[1] 张晓明[1] 

机构地区：[1]信息产业部电子第五研究所,广东广州510610

出　　处：《电子产品可靠性与环境试验》2004年第3期1-5,共5页Electronic Product Reliability and Environmental Testing

摘　　要：简要介绍了可靠性评估(REM)测试结构设计,并介绍了REM试验中与时间有关的栅氧化层击穿(TDDB)、热载流子注入(HCI)效应和电迁移(EM)效应的评价试验方法及实例。REM技术与工艺过程控制(PCM)、统计工艺控制(SPC)技术结合起来就可以实现对工艺的可靠性评价与控制,某集成电路生产公司将它应用于金属化工艺中,确定了工艺输入变量与电迁移可靠性的相关性,优化了金属化工艺试验条件,提高了金属化系统的抗电迁移能力。This paper introduces the design of reliability evaluation monitor and the experiment and instances of time dependent dielectric breakdown, hot carrier injection and EM. REM technol- ogy combined with PCM and SPC can be used to evaluate and control the reliability of process. REM technology is applied to metal process of an IC manufacturing company to. determine the rela- tivity of the process input variable with EM reliability, optimize the metal process testing conditions and improve the EM reliability of metal system.

关 键 词：可靠性评估 与时间有关的栅氧化层击穿 热载流子注入效应 电迁移效应 工艺过程控制 

分 类 号：TN407[电子电信—微电子学与固体电子学]