化学机械抛光流动性能分析  

Analysis on Flow Properties of Chemical Mechanical Polishing Process

作　　者：张朝辉[1] 雒建斌[2] 温诗铸[2] 

机构地区：[1]北京交通大学机电学院,北京100044 [2]清华大学摩擦学国家重点实验室,北京100084

出　　处：《润滑与密封》2004年第4期31-33,共3页Lubrication Engineering

基　　金：国家自然科学基金资助项目 (5 9735 1 1 0 ) ;杰出青年基金资助项目 (5 0 0 2 5 5 1 5 )

摘　　要：基于连续流体理论和其运动学关系 ,建立了力平衡方程关系式。推导了牛顿流体在化学机械抛光过程中的润滑方程 ,给出了模拟出的典型的压力分布情况和无量纲载荷、转矩与抛光垫转速变化的关系。计算结果表明 :抛光中的压力分布是沿半径方向变化的且抛光垫转速的增加将有助于提高抛光的切除速率。The force balance relations were set up on the basis of continuum fluids theory and the kinematic relations. The flow governing equation, i.e. the Reynolds equation for chemical mechanical polishing (CMP) process was deduced with Newtonian fluids. The typical pressure distribution was simulated and the relations between the dimensionless load, dimensionless moments vs angular velocity of the pad were given. The pressure varies with the position in the radial direction and the increase in pad roll velocity is conducive to the remove rate of CMP process.

关 键 词：化学机械抛光 润滑方程 压力分布 CMP 计算机硬盘 硅片 流动性能 

分 类 号：TG175[金属学及工艺—金属表面处理] TH117[金属学及工艺—金属学]